Atomic Layer Deposition (ALD) is a new process that can be used to replace chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition (PECVD), and sputtering technologies. Atomic layer deposition is also a type of chemical vapor deposition (CVD) technology. The difference from CVD is that ALD divides the traditional CVD reaction process into two half-reactions. One is the Chemisorption saturation process of the precursors, and the other is the Sequential surface chemical reaction process.
The precursor product and the material surface undergo a continuous, self-limiting (Self-limiting) reaction. The material is slowly deposited by reacting with different precursor products separately, and the substance is plated on the surface of the substrate in the form of a single atomic layer. The deposition of a material at (1 ~ 2 Å), so the growth of ALD material is controlled in the thickness range of a single atomic layer, forming a step coverage and large area uniformity.
Atomic layer deposition has the characteristics of high density, high thickness uniformity, high step coverage, low temperature process and atomic-level precise thickness control. In addition to ultra-thin and high-dielectric material coating, it can also target tiny circuit structures. Provide hole filling ability, such as the structure with high aspect ratio and related areas to provide a uniform thickness coating. Atomic layer deposition is a key semiconductor device assembly method, and it can also become a future development area in some nano material synthesis methods, including semiconductor integrated circuits, micro-electromechanical, thin-film transistors, OLED displays and component packaging.
Applicable substrate size
Range of working temperature
- High dielectric materials (Al2O3, HfO2, ZrO2, Ta2O5)
- Catalyst catalytic materials (Pt, Ir, Co, TiO2)
- Biomedical coatings (TiN, ZrN, CrN)
- Electroluminescence (SrS: Cu, ZnS: Mn, ZnS: Tb)
- Gas barrier film (Al2O3)
- Transparent conductive film (ZnO: Al, ITO)
- Special chamber cavity flow channel design improves the efficiency of precursor transportation.
- The thickness mistiness rate is less than 2%.
- Films with large area, uniformity, and chemical dose ratio can be grown, and structures with high aspect ratios still have excellent step coverage.
- Accurately controlled film thickness with atomic precision.
- Low temperature process.
- Dense and pinhole free deposition.